<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chunlei Wan</style></author><author><style face="normal" font="default" size="100%">Yifeng Wang</style></author><author><style face="normal" font="default" size="100%">Ning Wang</style></author><author><style face="normal" font="default" size="100%">Wataru Norimatsu</style></author><author><style face="normal" font="default" size="100%">Michiko Kusunoki</style></author><author><style face="normal" font="default" size="100%">Kunihito Koumoto</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Intercalation: building natural superlattice for better thermoelectric performance in layeredchalcogenides</style></title><secondary-title><style face="normal" font="default" size="100%">The 29&lt;sup&gt;th&lt;/sup&gt; International Conference on Thermoelectrics, ICT2010</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">conductivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Natural superlattice, Thermoelectric, Misfit layer compounds, Thermal</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">20100530-2010060</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/Wan-ICT-JEMS-2111-2010.fdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Shanghai, China</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A natural superlattice with a composition of (SnS)1.2(TiS2)2 is built by intercalating an SnSlayer into the van der Waals gap of layered TiS2, as has been directly observed by HRTEM. Inthe direction parallel with the layers, the thermoelectric performance is found to be improved,as the electron mobility was maintained while the phonon transport is significantly suppressed,which was identified due to softening of the transverse sound velocites because of theweakened interlayer bonding. In the direction perpendicular to the layers, the lattice thermalconductivity of (SnS)1.2(TiS2)2 is even lower than the predicted minimum thermalconductivity and phonon localization due to the translational disorder of the SnS layers in thedirection parallel with the layers possibly accounts for it. We propose a large family of misfitlayer compounds (MX)1+x(TX2)n (M = Pb, Bi, Sn, Sb, Rare earth elements; T = Ti, V, Cr, Nb,Ta, X = S, Se; n = 1, 2, 3) with a natural superlattice structure as possible candidates of highperformancethermoelectric materials.</style></abstract><label><style face="normal" font="default" size="100%">ICT2010 ITS Best Scientific Award Paper</style></label></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Crane, D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An Introduction to System Level Steady-State and Transient Modeling and Optimization of HighPower Density Thermoelectric Generator Devices Made of Segmented Thermoelectric Elements</style></title><secondary-title><style face="normal" font="default" size="100%">The 29&lt;sup&gt;th&lt;/sup&gt; International Conference on Thermoelectrics, ICT2010</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">thermoelectric, power generation, modeling, waste heat recovery, steady state, transient</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">20100530-2010060</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/Crane-ICT-JEMS-2105-2010.fdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Shanghai, China</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">High power density, segmented, thermoelectric (TE) elements have been intimately integrated into heat exchangers,eliminating many of the loss mechanisms of conventional TE assemblies, including the ceramic electrical isolationlayer. Numerical models comprised of simultaneously solved, non-linear, energy balance equations have beencreated to simulate these novel architectures. These models begin at the element level and progress to the deviceand finally to the system level. Both steady state and transient models have been created in a MATLAB/Simulinkenvironment. The models predict data from experiments in various configurations and applications over a broadrange of temperature, flow, and current conditions for power produced, efficiency, and a variety of other importantoutputs.The ability to accurately and precisely model such devices allows devices to be extensively studied withoutadditional experimentation. Using the validated models, the devices and systems can be optimized using advancedmulti-parameter optimization techniques for different operating conditions. Optimization objectives such asmaximum power output, power density, and efficiency can be pursued with numerous different constraints beingconsidered such as pressure drop and temperature limitations. Devices optimized for particular steady stateconditions can then be dynamically simulated in a transient operating model. This transient model incorporatessystem and device thermal time constants that affect performance. The transient model can be operated for a varietyof operating conditions including automotive and truck drive cycles.</style></abstract><label><style face="normal" font="default" size="100%">ICT2010 ITS Best Application Award Paper</style></label></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mitsuru Kambe</style></author><author><style face="normal" font="default" size="100%">T. Jinushi</style></author><author><style face="normal" font="default" size="100%">Z. Ishijima</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Harald Bottner</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Encapsulated Thermoelectric Modules and Compliant Pads for Advanced Thermoelectric Systems</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 28th International Conference on Thermoelectrics:, ICT2009</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">26/07/2009</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/JEMS-1338-o.fdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Freiburg, Germany</style></pub-location></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Tom Nilges</style></author><author><style face="normal" font="default" size="100%">O. Osters</style></author><author><style face="normal" font="default" size="100%">M. Bawohl</style></author><author><style face="normal" font="default" size="100%">S. Lange</style></author><author><style face="normal" font="default" size="100%">J. Messel</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Harald Bottner</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Highly Dynamic chalcogen chains in silver polychalcogenide halides: A new concept for Thermoelectrics</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 28th International Conference on Thermoelectrics:, ICT2009</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">26/07/2009</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/JEMS-1337-o.pdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Freiburg, Germany</style></pub-location></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jean-Numa Gillet</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Harald Bottner</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Self-Assembled Germanium Quantum-Dot Supercrystals in Silicon with Extremely Low Thermal Conductivities</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 28th International Conference on Thermoelectrics:, ICT2009</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2009</style></year><pub-dates><date><style  face="normal" font="default" size="100%">26/07/2009</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/JEMS-1377-o.fdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Freiburg, Germany</style></pub-location></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Koza, M. M.</style></author><author><style face="normal" font="default" size="100%">Johnson, M. R.</style></author><author><style face="normal" font="default" size="100%">Viennois, R.</style></author><author><style face="normal" font="default" size="100%">Mutka, H.</style></author><author><style face="normal" font="default" size="100%">Girard, L.</style></author><author><style face="normal" font="default" size="100%">Ravot, D.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Rogl, P.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Dynamics of thermoelectric nanocage-based compounds studied by inelastic neutron scattering.</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 25th International Conference on Thermoelectrics:, ICT2006</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2006</style></year><pub-dates><date><style  face="normal" font="default" size="100%">06/08/2006</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Koza-ICT-2006.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Vienna, Austria</style></pub-location><pages><style face="normal" font="default" size="100%">TBD</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We have applied high-resolution neutron time-of-flight spectroscopy and ab initio lattice dynamics calculations to study the guest dynamics of La and Ce in the filled skutterudite system xFe4Sb12. Both the experiments and the calculation show that the guest dynamics is governed by collective vibrations, i.e. phonons. Unlike the case of localized rattlers the guest modes reveal dispersive character and a non-trivial Q-dependence of the signal intensity. The rather low-energy of the guest modes is due to their higher mass and weaker bonding with the host network.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2006 Best Scientific Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zide, J. M. O.</style></author><author><style face="normal" font="default" size="100%">Kleiman-Shwarsctein, A.</style></author><author><style face="normal" font="default" size="100%">Strandwitz, N. C.</style></author><author><style face="normal" font="default" size="100%">Zimmerman, J. D.</style></author><author><style face="normal" font="default" size="100%">Steenblock-Smith, T.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Forman, A.</style></author><author><style face="normal" font="default" size="100%">Ivanovskaya, A.</style></author><author><style face="normal" font="default" size="100%">Stucky, G. D.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">aluminium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">erbium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">gallium arsenide</style></keyword><keyword><style  face="normal" font="default" size="100%">III-V semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">molecular beam epitaxial growth</style></keyword><keyword><style  face="normal" font="default" size="100%">nanoparticles</style></keyword><keyword><style  face="normal" font="default" size="100%">p-n junctions</style></keyword><keyword><style  face="normal" font="default" size="100%">semiconductor growth</style></keyword><keyword><style  face="normal" font="default" size="100%">solar cells</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2006</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://link.aip.org/link/?APL/88/162103/1 </style></url></web-urls></urls><number><style face="normal" font="default" size="100%">16</style></number><publisher><style face="normal" font="default" size="100%">AIP</style></publisher><volume><style face="normal" font="default" size="100%">88</style></volume><pages><style face="normal" font="default" size="100%">162103-3</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We report the molecular beam epitaxy growth of Al0.3Ga0.7As/GaAs multijunction solar cells with epitaxial, semimetallic ErAs nanoparticles at the interface of the tunnel junction. The states provided by these nanoparticles reduce the bias required to pass current through the tunnel junction by three orders of magnitude, and therefore drastically reduce the voltage losses in the tunnel junction. We have measured open-circuit voltages which are 97% of the sum of the constituent cells, which result in nearly double the efficiency of our multijunction cell with a conventional tunnel junction. ©2006 American Institute of Physics</style></abstract><notes><style face="normal" font="default" size="100%">2007 Goldsmid Award Winner</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Y. Z. Pei</style></author><author><style face="normal" font="default" size="100%">L. D. Chen</style></author><author><style face="normal" font="default" size="100%">W. Zhang</style></author><author><style face="normal" font="default" size="100%">X. Shi</style></author><author><style face="normal" font="default" size="100%">S. Q. Bai</style></author><author><style face="normal" font="default" size="100%">X. Y. Zhao</style></author><author><style face="normal" font="default" size="100%">Z. G. Mei</style></author><author><style face="normal" font="default" size="100%">X. Y. Li</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Synthesis and thermoelectric properties of KyCo4Sb12</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2006</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://link.aip.org/link/?APL/89/221107/1 </style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">89</style></volume><pages><style face="normal" font="default" size="100%">221107-1</style></pages><abstract><style face="normal" font="default" size="100%">Polycrystalline K-filled CoSb3 are synthesized successfully. The uplimit for K filling is at least 0.45, being higher than those of either alkaline-earth (AE) or rare-earth (RE) metals but being in consistent with our earlier theoretical prediction. The measured transport properties (300–800  K) show that K filling does not lower thermal conductivity much in comparison with AE or RE filling due to the relatively low mass of K atom. However, it improves electrical conductivity, retains large Seebeck coefficient, and leads to a reasonably good thermoelectric performance for the filled skutterudites. The maximum figure of merit ZT reaches 1 at 800  K for K0.38Co4Sb12.</style></abstract><notes><style face="normal" font="default" size="100%">2007 Goldsmid Award Winner</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kim, Woochul</style></author><author><style face="normal" font="default" size="100%">Zide, Joshua</style></author><author><style face="normal" font="default" size="100%">Gossard, Arthur</style></author><author><style face="normal" font="default" size="100%">Klenov, Dmitri</style></author><author><style face="normal" font="default" size="100%">Stemmer, Susanne</style></author><author><style face="normal" font="default" size="100%">Shakouri, Ali</style></author><author><style face="normal" font="default" size="100%">Majumdar, Arun</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Thermal Conductivity Reduction and Thermoelectric Figure of Merit Increase by Embedding Nanoparticles in Crystalline Semiconductors</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">arsenic alloys</style></keyword><keyword><style  face="normal" font="default" size="100%">erbium alloys</style></keyword><keyword><style  face="normal" font="default" size="100%">gallium arsenide</style></keyword><keyword><style  face="normal" font="default" size="100%">III-V semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">indium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">nanoparticles</style></keyword><keyword><style  face="normal" font="default" size="100%">phonon-defect interactions</style></keyword><keyword><style  face="normal" font="default" size="100%">point defect scattering</style></keyword><keyword><style  face="normal" font="default" size="100%">thermal conductivity</style></keyword><keyword><style  face="normal" font="default" size="100%">thermoelectricity</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2006</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://link.aps.org/abstract/PRL/v96/e045901 </style></url></web-urls></urls><number><style face="normal" font="default" size="100%">4</style></number><publisher><style face="normal" font="default" size="100%">APS</style></publisher><volume><style face="normal" font="default" size="100%">96</style></volume><pages><style face="normal" font="default" size="100%">045901-4</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Atomic substitution in alloys can efficiently scatter phonons, thereby reducing the thermal conductivity in crystalline solids to the &quot;alloy limit.&quot; Using In0.53Ga0.47As containing ErAs nanoparticles, we demonstrate thermal conductivity reduction by almost a factor of 2 below the alloy limit and a corresponding increase in the thermoelectric figure of merit by a factor of 2. A theoretical model suggests that while point defects in alloys efficiently scatter short-wavelength phonons, the ErAs nanoparticles provide an additional scattering mechanism for the mid-to-long-wavelength phonons.©2006 The American Physical Society</style></abstract><notes><style face="normal" font="default" size="100%">2007 Goldsmid Award Winner</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kurosaki, Ken</style></author><author><style face="normal" font="default" size="100%">Kosuga, Atsuko</style></author><author><style face="normal" font="default" size="100%">Goto, Keita</style></author><author><style face="normal" font="default" size="100%">Muta, Hiroaki</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tritt, T.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Ag9TlTe5 and AgTlTe: High ZT Materials With Extremely Low Thermal Conductivity</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 24th International Conference on Thermoelectrics: ICT2005</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year><pub-dates><date><style  face="normal" font="default" size="100%">June 2005</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Kurosaki-ICT-2005.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Clemson, SC  USA</style></pub-location><pages><style face="normal" font="default" size="100%">308-311</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We have studied the thermoelectric properties Ag9TlTe5 and AgTlTe. The thallium compounds have extremely low thermal conductivities around 0.25 Wm-1K-1 from room temperature to about 700 K. The thallium compounds indicate very high ZT values; especially the highest ZT value of Ag9TlTe5 is 1.23 obtained at 700 K. Ag9TlTe5 is a unique material combining extremely low thermal conductivity and relatively low electrical resistivity.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Welle, Richard P.</style></author><author><style face="normal" font="default" size="100%">Hardy, Brian S.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tritt, T.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Peltier-Actuated Microvalve Performance Optimization</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 24th International Conference on Thermoelectrics:, ICT2005</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year><pub-dates><date><style  face="normal" font="default" size="100%">June 2005</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Welle-ICT-2005.pdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Clemson, SC  USA</style></pub-location><pages><style face="normal" font="default" size="100%">328-331</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Valves for microfluidic systems have, for various reasons, proven to be difficult to fabricate, cumbersome to operate, and/or unreliable. We have explored the performance of a novel microfluidic valve formed by creating a flow channel past a Peltier junction. Using the Peltier junction as a thermoelectric cooler causes the fluid in the valve to freeze, forming a plug that blocks flow through the valve. This type of valve is fundamentally leak-free, has no moving parts, and is electrically actuated. We have fabricated several experimental prototypes and evaluated their performance. We find that they are reliably capable of closing in less than 100 ms, and of opening substantially faster.</style></abstract><notes><style face="normal" font="default" size="100%">2005 Best Applications Paper Award</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zide, J. M.</style></author><author><style face="normal" font="default" size="100%">Klenov, D. O.</style></author><author><style face="normal" font="default" size="100%">Stemmer, S.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Zeng, G.</style></author><author><style face="normal" font="default" size="100%">Bowers, J. E.</style></author><author><style face="normal" font="default" size="100%">Vashaee, D.</style></author><author><style face="normal" font="default" size="100%">Shakouri, A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">electron density</style></keyword><keyword><style  face="normal" font="default" size="100%">electron mobility</style></keyword><keyword><style  face="normal" font="default" size="100%">erbium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">gallium arsenide</style></keyword><keyword><style  face="normal" font="default" size="100%">III-V semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">indium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">nanocomposites</style></keyword><keyword><style  face="normal" font="default" size="100%">nanoparticles</style></keyword><keyword><style  face="normal" font="default" size="100%">Seebeck effect</style></keyword><keyword><style  face="normal" font="default" size="100%">semiconductor doping</style></keyword><keyword><style  face="normal" font="default" size="100%">semiconductor growth</style></keyword><keyword><style  face="normal" font="default" size="100%">superlattices</style></keyword><keyword><style  face="normal" font="default" size="100%">thermoelectric power</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2005</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://link.aip.org/link/?APL/87/112102/1 </style></url></web-urls></urls><number><style face="normal" font="default" size="100%">11</style></number><publisher><style face="normal" font="default" size="100%">AIP</style></publisher><volume><style face="normal" font="default" size="100%">87</style></volume><pages><style face="normal" font="default" size="100%">112102-3</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We have grown composite epitaxial materials that consist of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. We measure electron concentration, mobility, and Seebeck coefficient of these materials and discuss their potential for use in thermoelectric power generators. ©2005 American Institute of Physics</style></abstract><notes><style face="normal" font="default" size="100%">2007 Goldsmid Award Winner</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kaibe, Hiromasa</style></author><author><style face="normal" font="default" size="100%">Rauscher, Lutz</style></author><author><style face="normal" font="default" size="100%">Aoyama, Ikuto</style></author><author><style face="normal" font="default" size="100%">Mukoujima, Mika</style></author><author><style face="normal" font="default" size="100%">Kanda, Toshio</style></author><author><style face="normal" font="default" size="100%">Fujimoto, Shinichi</style></author><author><style face="normal" font="default" size="100%">Kurosawa, Toshitaka</style></author><author><style face="normal" font="default" size="100%">Sano, Seijirou</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Gol, O.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Development of the Thermoelectric Generating Modules using Silicide</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 23rd International Conference on Thermoelectrics, ICT2004</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2004</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Kaibe-ICT-2004.pdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Adelaide, Australia</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Komatsu is currently participating in the NEDO project &quot;The
Development for Advanced Thermoelectric Conversion System&quot;, which
started in September 2002 and is supervised by Prof. Kajikawa. The
projectÃ¢â‚¬â„¢s mid-term target is 12% conversion efficiency in the
temperature region between 30 and 580 °C until end of 2004. Finally
it is aimed to achieve 15% by end of March 2007. The final structure
will be 2-stage stacked modules using Bi-Te and silicide materials.
Beside the module's efficiency one of the major concerns is of course
their lifetime and endurance. So relief of thermal induced stress as
well as the suppression of diffusion is an indispensable subject in
terms of the actual operation. Another very important topic is the
reliable characterization of the modules, such as maximum output
power and conversion efficiency1). The presentation will be focused
on the module's performance, heat cycling tests combined with Finite
Element Analysis and the used characterization techniques.

 1. L.Rauscher et al, New approach for highly efficiency determination of
thermoelectric generator modules, in Proc. 22nd Int. Conf. on
Thermoelectrics, La Grande-Motte, France, 2002, pp. 508-511.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2004 Best Applications Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ji, X. H.</style></author><author><style face="normal" font="default" size="100%">Zhao, X. B.</style></author><author><style face="normal" font="default" size="100%">Zhang, Y. H.</style></author><author><style face="normal" font="default" size="100%">Sun, T.</style></author><author><style face="normal" font="default" size="100%">Ni, H. L.</style></author><author><style face="normal" font="default" size="100%">Lu, B. H.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Gol, O.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Novel thermoelectric Bi2Te3 nanotubes and nanocapsules prepared by hydrothermal synthesis</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 23rd International Conference on Thermoelectrics, ICT2004</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2004</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Ji-ICT-2004.pdf</style></url></related-urls></urls><pub-location><style face="normal" font="default" size="100%">Adelaide, Australia</style></pub-location><pages><style face="normal" font="default" size="100%">(4)</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Bi2Te3 nano-powders have been prepared via hydrothermal synthesis in closed and opened systems respectively by using Te powder and BiCl3 as the reactants and NaBH4 as the reductant. The morphology and microstructure investigations of the products show that novel quasi-one-dimensional Bi2Te3 nanotubes and nanocapsules with an average diameter of about 100nm have formed during the reactions. The nanotubes-contained powder was used as the additive of hot-pressed Bi2Te3 based alloys. Thermoelectric transport measurements show that the thermoelectric properties of the nano-composite bulk materials are remarkably increased. The maximum figure of merit ZT above 1.2 was achieved.</style></abstract><notes><style face="normal" font="default" size="100%">2004 Best Scientific Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Simard, J. M.</style></author><author><style face="normal" font="default" size="100%">Vasilevskiy, D.</style></author><author><style face="normal" font="default" size="100%">Turenne, S.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tedenac, J. C.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of composition and texture on the thermoelectric and mechanical properties of extruded (Bi/sub 1-x/Sb/sub x/)/sub 2/(T</style></title><secondary-title><style face="normal" font="default" size="100%">22nd International Conference on Thermoelectrics (ICT2003)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2003</style></year><pub-dates><date><style  face="normal" font="default" size="100%">17-21 Aug. 2003</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">La Grande Motte, France</style></pub-location><pages><style face="normal" font="default" size="100%">207- 210</style></pages><isbn><style face="normal" font="default" size="100%">0-7803-8301-x</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents the results obtained after five years of process development to produce bismuth telluride based thermoelectric alloys by powder consolidation approach. The synthesis of the alloys is obtained by mechanical alloying from pure elemental powders. Billets are then produced by cold pressing followed by hot extrusion in order to have a fully dense polycrystalline product with a crystal texture characterized by the c-axis aligned perpendicularly to the extrusion direction. Semiconductors of type-n and type-p were produced by carefully controlling the chemical composition of the alloys and the concentration of doping agents. The evolution of the thermoelectric properties is given as a function of the constituents contents of the alloy to determine an optimal composition that leads to maximum value of the figure of merit. The effect of texture is measured not only on the thermoelectric properties but also on the mechanical behaviour of the material.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2003 Best Appliactions Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Terasaki, L.</style></author><author><style face="normal" font="default" size="100%">Fujii, T.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Tedenac, J. C.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Magneto-thermoelectric effects of the layered cobalt oxides</style></title><secondary-title><style face="normal" font="default" size="100%">22nd International Conference on Thermoelectrics (ICT2003)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2003</style></year><pub-dates><date><style  face="normal" font="default" size="100%">17-21 Aug. 2003</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">La Grande Motte, France</style></pub-location><pages><style face="normal" font="default" size="100%">207- 210</style></pages><isbn><style face="normal" font="default" size="100%">0-7803-8301-x</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The layered cobalt oxides having the CdI/sub 2/-type hexagonal CoO/sub 2/ layer exhibit good thermoelectric properties especially at high temperatures. This is attributed to the fact that large entropy of k/sub B/ln6 is carried by the low-spin-state Co/sup 4+/. Since the entropy of k/sub B/ln6 comes from the spin and orbital degrees of freedom, it is sensitive to external magnetic field. Magnetic field can release the spin degeneracy through the Zeeman effect, and can also release the orbital degeneracy through the high-spin-low-spin transition. Here we report on measurement and analysis on the field dependence of the thermoelectric properties of the Bi-based layered cobalt oxide [(Bi,Pb)/sub 2/Sr/sub 2/O/sub 4/]/sub y/CoO/sub 2/. Magnetic field significantly suppresses the thermopower, resistivity and thermal conductivity. This is consistently understood in terms of the spin-density-wave-like pseudogap suppressed by external fields.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2003 Best Scientific Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ghoshal, U.</style></author><author><style face="normal" font="default" size="100%">Shi, L.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Design and characterization of cold point thermoelectric coolers</style></title><secondary-title><style face="normal" font="default" size="100%">XXI International Conference on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2002</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Ghoshal-ICT-2002.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Long Beach, CA  USA</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We describe structured point-contact thermoelectric
devices that confine the thermal gradients and electric fields at
the boundaries of the cold end, and exploits the reduction of
thermal conductivity at the interfaces, tunneling properties of
point contacts, and the poor electron-phonon coupling at the
junctions. We propose a theory of the structured cold point
metal-semiconductor contacts and detail the design of cold
point thermoelectric coolers. Temperature and electrical measurements
of prototype cold point coolers using bismuth chalcogenides
in vacuum indicate doubling of the thermoelectric
figure-of-merit ZT values to the range of 1.4-1.7 at room temperature.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2002 Best Scientific Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bell, L. E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Use of thermal isolation to improve thermoelectric system operating efficiency</style></title><secondary-title><style face="normal" font="default" size="100%">XXI International Conference on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2002</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Bell-ICT-2002.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Long Beach, CA  USA</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Thermal isolation of sections of individual
thermoelectric elements, modules and arrays of modules can
be used to progressively heat and cool a working fluid so as
to increase system efficiency when compared with that of
standard TE modules with isothermal hot and cold sides.
Equations for performance in heating and cooling modes are
derived for steady state conditions with one-dimensional,
temperature-independent material properties. Analytical
approximations with closed form solutions are given for
COP in cooling and heating. Results are compared with
precise numerical solutions. Efficiency is shown to increase
up to 120% over that of conventional TE modules for
certain important applications that involve cooling or
heating of a fluid or solid, such as air conditioning and
heating. Limitations of the technology are also discussed. It
is shown that in the particular case of steady state
refrigeration usage benefit is limited or does not occur.
Predicted performance of air conditioning systems using
thermal isolation, in combination with advanced TE
materials with ZT of 2 to 3 are shown to be comparable to
refrigerant 134A.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2002 Best Applications</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lambrecht, A.</style></author><author><style face="normal" font="default" size="100%">Beyer, H.</style></author><author><style face="normal" font="default" size="100%">Nurnus, J.</style></author><author><style face="normal" font="default" size="100%">Kunzel, C.</style></author><author><style face="normal" font="default" size="100%">Bottner, H.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Zhang, Jianzhong</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">High figure of merit ZT in PbTe and Bi2Te3 based superlattice structures by thermal conductivity reduction</style></title><secondary-title><style face="normal" font="default" size="100%">XX International Conference on Thermoelectrics: Proceedings ICT2001</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2001</style></year><pub-dates><date><style  face="normal" font="default" size="100%">8-11 June 2001</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE, Piscataway, NJ  USA</style></publisher><pub-location><style face="normal" font="default" size="100%">Beijing, People's Republic of China</style></pub-location><pages><style face="normal" font="default" size="100%">335-339</style></pages><isbn><style face="normal" font="default" size="100%">0780372050</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><call-num><style face="normal" font="default" size="100%">TK2950 .I54 2001</style></call-num><notes><style face="normal" font="default" size="100%">ICT2001 Best Scientific Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bass, John C.</style></author><author><style face="normal" font="default" size="100%">Kushch, Aleksandr S.</style></author><author><style face="normal" font="default" size="100%">Elsner, Norbert B.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Zhang, Jianzhong</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Thermoelectric Generator (TEG) for Heavy Diesel Trucks</style></title><secondary-title><style face="normal" font="default" size="100%">XX International Conference on Thermoelectrics: Proceedings ICT2001</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2001</style></year><pub-dates><date><style  face="normal" font="default" size="100%">8-11 June 2001</style></date></pub-dates></dates><publisher><style face="normal" font="default" size="100%">IEEE, Piscataway, NJ  USA</style></publisher><pub-location><style face="normal" font="default" size="100%">Beijing, People's Republic of China</style></pub-location><pages><style face="normal" font="default" size="100%">1-6</style></pages><isbn><style face="normal" font="default" size="100%">0780372050</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">An improved TEG for the Heavy Duty Class Eight Diesel Trucks is under development at Hi-Z Technology. Previous efforts were focused on TEG prototype development, fabrication and testing. The prototype was able to generate about 1kW of electrical power from the Cummins NTC 350 Diesel engine exhaust but exhibited mechanical degradation during the subsequent road test due to module movement. The current TEG is designed to be equipped with the improved HZ-14 Thermoelectric (TE) modules, which features better mechanical properties; also, the modules are securely held in place.</style></abstract><call-num><style face="normal" font="default" size="100%">TK2950 .I54 2001</style></call-num><notes><style face="normal" font="default" size="100%">ICT2001 Best Applications Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Heremans, J. P.</style></author><author><style face="normal" font="default" size="100%">Thrush, Christopher M.</style></author><author><style face="normal" font="default" size="100%">Morelli, D. T.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Rowe, D M</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Geometrical Magnetothermopower</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of 19th International Conference on Thermoelectrics (ICT2000)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2000</style></year></dates><publisher><style face="normal" font="default" size="100%">Babrow, Wales</style></publisher><pub-location><style face="normal" font="default" size="100%">Cardiff, Wales</style></pub-location><pages><style face="normal" font="default" size="100%">201-204</style></pages><isbn><style face="normal" font="default" size="100%">0-9519286-2-7</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We describe here theoretically and experimentally a new concept that shows how the geometry of a semiconductor sample can be manipulated to create a large change of the thermoelectric power in a magnetic field.  The most effective geometry is one that short-circuits the Nernst-Ettinghausen effect.  When the minority carriers have a larger mobility that the majority carriers, this geometrical magnetothermopower (GMT) effect can be designed to freeze out their contribution to the total thermopower.  The thermoelectric figure of merit of Bi1-xSbx alloys is greatly enhanced in a magnetic field, due to the intrinsic magnetoresistance of the material.  By analogy, the GMT effect described here can be used to design thermoelectric materials with enhanced figure of merit in a magnetic field from other semiconductors.  p-type InSb is used here to demonstrate the effect experimentally.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2000 Best Scientific Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">R. Y. Nuwayhid</style></author><author><style face="normal" font="default" size="100%">Moukalled, F.</style></author><author><style face="normal" font="default" size="100%">AbuSaid, R.</style></author><author><style face="normal" font="default" size="100%">Daaboul, M.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Rowe, D M</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Practical Design Considerations for a Rural Stove-Top Thermoelectric Generator</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of 19th International Conference on Thermoelectrics (ICT2000)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2000</style></year></dates><publisher><style face="normal" font="default" size="100%">Babrow, Wales</style></publisher><pub-location><style face="normal" font="default" size="100%">Cardiff, Wales</style></pub-location><pages><style face="normal" font="default" size="100%">490-497</style></pages><isbn><style face="normal" font="default" size="100%">0-9519286-2-7</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A stove-top TEG, to be used in rural area in winter, was built and tested.  Peltier-type modules with large thermoelement areas were used.  Several types of heat sinks were tested.  The open tope water-filled pan heat sink was found to be a possible option being useful cooking as well.  In addition, in order to arrest possible thermal transients, protector designs were considered.</style></abstract><notes><style face="normal" font="default" size="100%">ICT2000 Best Applications Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Koga, T.</style></author><author><style face="normal" font="default" size="100%">Sun, X.</style></author><author><style face="normal" font="default" size="100%">Cronin, S. B.</style></author><author><style face="normal" font="default" size="100%">Dresselhaus, M. S.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Carrier pocket engineering to design superior thermoelectric materials using superlattice structures</style></title><secondary-title><style face="normal" font="default" size="100%">Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1999</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Piscataway, NJ, USA</style></pub-location><pages><style face="normal" font="default" size="100%">378-81</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The concept of Carrier Pocket Engineering is applied to GaAs/AlAs and Si/Ge superlattices to obtain a large thermoelectric figure of merit Z/sub 3D/T. For both GaAs/AlAs and Si/Ge systems, the calculated values for Z/sub 3D/T(0.4 and 0.96 for GaAs/AlAs and Si/Ge superlattices, respectively, at 300 K) are greatly enhanced relative to those for the corresponding bulk materials. We propose that the key to obtain such enhancements in Z/sub 3D/T is the careful optimization process of the structure and geometries of the superlattice, so that we can make use of the higher energy valleys in the 3D conduction band, that have no effect on electron transport in the bulk semiconductor, but can contribute to the thermoelectric transport in the superlattice form. Other advantages of having superlattice structures, such as the increased scattering of phonons to reduce the lattice conductivity and the lattice strain effect in Si/Ge superlattices to control the conduction band offset, are also discussed</style></abstract><accession-num><style face="normal" font="default" size="100%">6656937</style></accession-num><notes><style face="normal" font="default" size="100%">ICT99 Best Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martin-Lopez, R.</style></author><author><style face="normal" font="default" size="100%">Dauscher, A.</style></author><author><style face="normal" font="default" size="100%">Devaux, X.</style></author><author><style face="normal" font="default" size="100%">Lenoir, B.</style></author><author><style face="normal" font="default" size="100%">Scherrer, H.</style></author><author><style face="normal" font="default" size="100%">Zandona, M.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Schumann, J.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of the Consolidation Technique on the Thermoelectric Properties of Mechanically Alloyed Bi-Sb</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 17th International Conference on Thermoelectrics, ICT97</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1997</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Dresden, Germany</style></pub-location><pages><style face="normal" font="default" size="100%">184-187</style></pages><isbn><style face="normal" font="default" size="100%">0-7803-4057-4</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The aim of this work is multiple:  first the synthesis by mechanical alloying of homogeneous Bi85Sb15 polycrystalline powder alloys, that have been achieved with an adequate ball to powder weight ratio (10:1), second the consolidation of the powders either by sintering or by hot extrusion in order to try to introduce a texture in the material and finally to measure the thermoelectric properties of consolidated samples in the 77-300 K temperature range.</style></abstract><notes><style face="normal" font="default" size="100%">ICT97 Best Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fess, K.</style></author><author><style face="normal" font="default" size="100%">Arushanov, E.</style></author><author><style face="normal" font="default" size="100%">Kaefer, W.</style></author><author><style face="normal" font="default" size="100%">Kloc, Ch.</style></author><author><style face="normal" font="default" size="100%">Bucher, E.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Schumann, J.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Transport Properties of the Skutterudite CoSb3</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the 17th International Conference on Thermoelectrics, ICT97</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1997</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Dresden, Germany</style></pub-location><pages><style face="normal" font="default" size="100%">347-350</style></pages><isbn><style face="normal" font="default" size="100%">0-7803-4057-4</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We prepared single crystals of CoSb3 by chemical vapor transport and from Sb-rich melt.  We performed measurements of the resistivity, the Hall-effect and thermoelectric power over a large temperature range.</style></abstract><notes><style face="normal" font="default" size="100%">ICT97 Best Poster</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wagner, A.</style></author><author><style face="normal" font="default" size="100%">Foreman, R. J.</style></author><author><style face="normal" font="default" size="100%">Summers, L. J.</style></author><author><style face="normal" font="default" size="100%">Barbee, T. W.</style></author><author><style face="normal" font="default" size="100%">Farmer, J. C.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Fleurial, J.-P.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Synthesis and Evaluation of Thermoelectric Multilayer Films</style></title><secondary-title><style face="normal" font="default" size="100%">International Conference on Thermoelectrics, ICT96, Proceedings</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">Proceedings of the 1996 15th International Conference on Thermoelectrics, ICT'96</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year><pub-dates><date><style  face="normal" font="default" size="100%">1996 Mar 26-29</style></date></pub-dates></dates><pub-location><style face="normal" font="default" size="100%">Pasadena, CA USA</style></pub-location><pages><style face="normal" font="default" size="100%">459-463</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The deposition of compositionally modulated (Bi1-xSbx)2(Te1-ySey)3 thermoelectric multilayer films by magnetron sputtering has been demonstrated.  Structures with a period of 140 A are shown to be stable to interdiffusion at the high deposition temperatures necessary for growth of single-layer crystalline films with ZT&gt;0.5.  These multilayers are of the correct dimension to exhibit the electronic properties of quantum well structures.  Furthermore it is shown that the Seebeck coefficient of the films is not degraded by the presense of this multilayer structure.  It may be possible to synthesize a multilayer thermoelectric material with enhanced ZT by maximizing the barrier height through optimization of the composition of the barrier.</style></abstract><notes><style face="normal" font="default" size="100%">ICT96 Best Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Allred, D. D.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 1: An Overview of Thermoelectrics</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Allred-Lecture1-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Vining, C. B.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 2: Thermoelectric Fundamentals and Physical Phenomena</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Vining-Lecture2-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fleurial, Jean-Pierre</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 3: Selection and Evaluation of Materials for Thermoelectric Applications</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Fleurial-Lecture3-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mathiprakasam, B.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 4: Basic Considerations in the Selection of TE Technology</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Mathiprakasam-Lecture4-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 5: Thermoelectric Modules for Power Generation and Cooling</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Uemura-Lecture5-SCT90.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Buist, R. J.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 6: Characterization of TE Materials and Devices</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Buist-Lecture6-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Stockholm, J. G.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 7: How to use Thermoelectrics for Cooling - Modular Approach</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Stockholm-Lecture7-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><custom1><style face="normal" font="default" size="100%">7</style></custom1></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 8i: Laboratory Applications</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Uemura-Lecture8i-SCT90.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><custom1><style face="normal" font="default" size="100%">7</style></custom1></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Stockholm, J. G.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 8ii: Industrial Applications</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Stockholm-Lecture8ii-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><custom1><style face="normal" font="default" size="100%">7</style></custom1></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Buist, R. J.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Lecture 8iii: Consumer Applications of Thermoelectric Cooling</style></title><secondary-title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">SCT-93</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Buist-Lecture8iii-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>13</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Uemura, K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">SCT-93  Short Course on Thermoelectrics</style></title></titles><dates><year><style  face="normal" font="default" size="100%">1993</style></year></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/CoverPage-SCT93.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">International Thermoelectric Society</style></publisher><pub-location><style face="normal" font="default" size="100%">Yokohama-shi, Japan</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Carle, M.</style></author><author><style face="normal" font="default" size="100%">Perrin, D.</style></author><author><style face="normal" font="default" size="100%">Caillat, T.</style></author><author><style face="normal" font="default" size="100%">Scherrer, S.</style></author><author><style face="normal" font="default" size="100%">Scherrer, H.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Rowe, D M</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Thermoelectric properties of solid solutions of Bi2(Te1-xSex)3 with x=0.05 and x=0.1 grown by T.H.M.</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of The Tenth International Conference on Thermoelectrics, ICT91</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">Proceedings of the 1991 10th International Conference on Thermoelectrics, ICT'91</style></tertiary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Bismuth Telluride</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1991</style></year></dates><publisher><style face="normal" font="default" size="100%">Babrow Press</style></publisher><pub-location><style face="normal" font="default" size="100%">Cardiff, Wales</style></pub-location><pages><style face="normal" font="default" size="100%">27-30</style></pages><isbn><style face="normal" font="default" size="100%">0-95129286-0-0</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Many authors in the last thirty years have reported results obtained on alloys based on Bi, Te, Sb and Se.  From these studies it appears that the Bi2Te3-Bi2Se3 solid solutions are the best n-type materials fro refrigeration at room temperature.  Interesting results were obtained but never in a reproducible way.  This is due both to the use of halogen dopants and to the growth technique.  Indeed, most of the samples were grown by a Bridgman or a Czochralsky method which which do not allow the obtaining of homogeneous ingots.  in our previous papers on thermoelectric properties of p-type materials (1) we have shown that Travelling Heater Metho (T.H.M&gt;) is an appropriate technique to get homogeneous ingots with high figure of merit (Z=3.1x10-3 K-1) in a reproducible way.  But if we want to apply this technique we must first know the thermodynamical equilibriums of a given solid with a liquid in the Bi-Te-Se terary system.  Thus we will present the results obtained for the interesting part of this diagram; from this moment we will be able to grow well defined and homogeneous ingos of Bi2(Te1-xSex)3 with x=0.05 and x=0.1.  Then we characterize the samples as a function of stoichiometric deviations.  The results will be compared with those performed on Bi2Te3 (2).</style></abstract><notes><style face="normal" font="default" size="100%">ICT91 Best Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Vining, C. B.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Vining, C. B.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Silicides as promising thermoelectric materials</style></title><secondary-title><style face="normal" font="default" size="100%">Proceedings of the IX International Conference on Thermoelectrics (ICT90)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1990</style></year><pub-dates><date><style  face="normal" font="default" size="100%">19/03/1990</style></date></pub-dates></dates><urls><related-urls><url><style face="normal" font="default" size="100%">http://www.its.org/system/files/uploads/Vining-ICT-1990.pdf</style></url></related-urls></urls><publisher><style face="normal" font="default" size="100%">Jet Propulsion Laboratory</style></publisher><pub-location><style face="normal" font="default" size="100%">Pasadena, CA</style></pub-location><pages><style face="normal" font="default" size="100%">249-259</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In conventional thermoelectric materials (Bi2Te3, PbTe, SiGe), the conduction and valence bands are derived from s and p orbitals.  But most thermocouple wire materials (chromel, alumel, WRe, PtRh) involve alloys with partially filled d-bands, resulting in Seebeck values much larger than for metals with filled or empty d-bands (such as Cu or Na, respectively).  Semiconductors for which the valence and/or conduction band are dominated by d-band character may be able to combine the high Seebeck values typical of transition metal alloys, with the ability to achieve optimum doping levels typical of conventional thermoelectric materials.  Certain metal-silicon compounds appear to have this desirable combination of properties.  In this paper, compounds of silicon with elements from groups 1 through 8, including the d-band elements, are reviewed for their potential as high figure of merit (ZT) thermoelectric materials.  A number of amateirials are identified which appear to have the potential for ZT values much greater than ZT ~ 1 typical of current state of the art materials.</style></abstract><notes><style face="normal" font="default" size="100%">ICT90 Best Paper</style></notes></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rowe, D M</style></author><author><style face="normal" font="default" size="100%">Morgan, D. V.</style></author><author><style face="normal" font="default" size="100%">Kiely, J.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Scherrer, H.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Fabrication of a miniature thermoelectric generator using integrated circuit technology</style></title><secondary-title><style face="normal" font="default" size="100%">Eighth International Conference on Thermoelectric Energy Conversion</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1989</style></year></dates><publisher><style face="normal" font="default" size="100%">Institut National Polytechnique de Lorraine</style></publisher><pub-location><style face="normal" font="default" size="100%">Nancy, France</style></pub-location><pages><style face="normal" font="default" size="100%">171-175</style></pages><isbn><style face="normal" font="default" size="100%">2-905267-15-1</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The fabrication of a miniature thermoelectric generator is described in which alternate n- and p-type active elements are ion implanted into an undoped substrate.  Metallization of contacts enables several hundred thermocouples to be connected electrically in series and occupy an area approximately 25mm square.</style></abstract><notes><style face="normal" font="default" size="100%">ICT89 Best Paper</style></notes></record></records></xml>
