<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zide, J. M.</style></author><author><style face="normal" font="default" size="100%">Klenov, D. O.</style></author><author><style face="normal" font="default" size="100%">Stemmer, S.</style></author><author><style face="normal" font="default" size="100%">Gossard, A. C.</style></author><author><style face="normal" font="default" size="100%">Zeng, G.</style></author><author><style face="normal" font="default" size="100%">Bowers, J. E.</style></author><author><style face="normal" font="default" size="100%">Vashaee, D.</style></author><author><style face="normal" font="default" size="100%">Shakouri, A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">electron density</style></keyword><keyword><style  face="normal" font="default" size="100%">electron mobility</style></keyword><keyword><style  face="normal" font="default" size="100%">erbium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">gallium arsenide</style></keyword><keyword><style  face="normal" font="default" size="100%">III-V semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">indium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">nanocomposites</style></keyword><keyword><style  face="normal" font="default" size="100%">nanoparticles</style></keyword><keyword><style  face="normal" font="default" size="100%">Seebeck effect</style></keyword><keyword><style  face="normal" font="default" size="100%">semiconductor doping</style></keyword><keyword><style  face="normal" font="default" size="100%">semiconductor growth</style></keyword><keyword><style  face="normal" font="default" size="100%">superlattices</style></keyword><keyword><style  face="normal" font="default" size="100%">thermoelectric power</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2005</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://link.aip.org/link/?APL/87/112102/1 </style></url></web-urls></urls><number><style face="normal" font="default" size="100%">11</style></number><publisher><style face="normal" font="default" size="100%">AIP</style></publisher><volume><style face="normal" font="default" size="100%">87</style></volume><pages><style face="normal" font="default" size="100%">112102-3</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We have grown composite epitaxial materials that consist of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. We measure electron concentration, mobility, and Seebeck coefficient of these materials and discuss their potential for use in thermoelectric power generators. ©2005 American Institute of Physics</style></abstract><notes><style face="normal" font="default" size="100%">2007 Goldsmid Award Winner</style></notes></record></records></xml>