Charles,

Probably everything you need is in the classic paper:

T. H. Geballe and G. W. Hull, "Seebeck Effect in Silicon," Physical Review, vol. 98, pp. 940-947, 1955.

But you might also look at:

J. P. Dismukes, L. Ekstrom, E. F. Steigmeir, I. Kudman, and D. S. Beers, "Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to 1300 K," J. Appl. Phys., vol. 35, pp. 2899-2907, 1964.

The Dismukes paper is on Ge-Si (not pure Si), but the Seebeck of (say) 85% Si-15% Ge is not much different from 100% Si, and the Dismukes study does a better job of the carrier concentration dependence than anything I've seen on pure Si.

As for poly-silicon vs. single crystal, the difference appears to be really small, probably not observable at 300 K (although at low temperatures, where phonon-drag becomes important, the grain-size effect might become quite significant).

Hope that helps.

- Cronin

Hey Cronin!

Your encyclopedic knowledge of all things thermoelectric is most impressive!

Can you tell me where I can look up the thermoelectric properties of the inhomogeneous mixtures of dissimilar metals commonly used in restorative dentistry?

Keith P Walsh