Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

TitleThermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles
Publication TypeJournal Article
Year of Publication2005
AuthorsZide JM, Klenov DO, Stemmer S, Gossard AC, Zeng G, Bowers JE, Vashaee D, Shakouri A
Journal TitleApplied Physics Letters
Volume87
Pagination112102-3
Keywordselectron density, electron mobility, erbium compounds, gallium arsenide, III-V semiconductors, indium compounds, nanocomposites, nanoparticles, Seebeck effect, semiconductor doping, semiconductor growth, superlattices, thermoelectric power
Abstract

We have grown composite epitaxial materials that consist of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. We measure electron concentration, mobility, and Seebeck coefficient of these materials and discuss their potential for use in thermoelectric power generators. ©2005 American Institute of Physics

URLhttp://link.aip.org/link/?APL/87/112102/1
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