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Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles
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| Publication Type | | Journal Article |
| Year of Publication | | 2005 |
| Authors | | Zide, J.M.; Klenov, D.O.; Stemmer, S.; Gossard, A.C.; Zeng, G.; Bowers, J.E.; Vashaee, D.; Shakouri, A. |
| Journal Title | | Applied Physics Letters |
| Volume | | 87 |
| Pagination | | 112102-3 |
| Key Words | | erbium compounds; indium compounds; gallium arsenide; thermoelectric power; nanoparticles; nanocomposites; III-V semiconductors; superlattices; electron density; electron mobility; Seebeck effect; semiconductor growth; semiconductor doping |
| Abstract | | We have grown composite epitaxial materials that consist of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. We measure electron concentration, mobility, and Seebeck coefficient of these materials and discuss their potential for use in thermoelectric power generators. ©2005 American Institute of Physics
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| Notes | | 2007 Goldsmid Award Winner
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| URL | | http://link.aip.org/link/?APL/87/112102/1 |
| Export | | Tagged XML BibTex |
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