Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

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Publication Type  Journal Article
Year of Publication  2005
Authors  Zide, J.M.; Klenov, D.O.; Stemmer, S.; Gossard, A.C.; Zeng, G.; Bowers, J.E.; Vashaee, D.; Shakouri, A.
Journal Title  Applied Physics Letters
Volume  87
Pagination  112102-3
Key Words  erbium compounds; indium compounds; gallium arsenide; thermoelectric power; nanoparticles; nanocomposites; III-V semiconductors; superlattices; electron density; electron mobility; Seebeck effect; semiconductor growth; semiconductor doping
Abstract  

We have grown composite epitaxial materials that consist of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. We measure electron concentration, mobility, and Seebeck coefficient of these materials and discuss their potential for use in thermoelectric power generators. ©2005 American Institute of Physics

Notes  

2007 Goldsmid Award Winner

URL  http://link.aip.org/link/?APL/87/112102/1
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